The optical generation rate is then imported into CHARGE to perform the electrical simulations. The field distribution inside the Ge layer is used to calculate the absorption profile and optical generation rate. Parameters from these simulations are imported into a compact model in INTERCONNECT to perform a photonic circuit simulation and obtain an eye diagram.Ī detailed electromagnetic simulation using 3D FDTD with a mode source at 1.55 um wavelength calculates the field propagation through the taper and into the detector. FDTD is used to characterize the optical performance of the detector, while CHARGE is used to obtain the electric performance. This input light signal generates electron-hole pairs in Ge, which are subsequently separated under internal electric fields in the photodetector and flow towards electrical contacts forming charge current. This example is taken from T.-Y Liow et al., where a Ge-on-Si vertical photodetector illuminated at 1.55 um wavelength is fed from a Si waveguide into a Ge absorption layer through a taper. Understand the simulation workflow and key results Links to other types of photodetectors, such as lateral and uni-travelling carriers can be found in the additional resources. Two methods of bandwidth calculation, small-signal AC and transient + FFT are described and compared in the appendix, as well as photodetector length optimization using EME and power absorption calculation. Key results such as dark and photocurrents, responsivity, bandwidth, and eye diagram are calculated. It also provides an automated workflow to run the device-level simulations and collect data for CML Compiler for compact model generation. This example describes a complete multiphysics (optical, electrical) simulation of a vertical Ge-Si photodetector, ending with a compact model circuit simulation in INTERCONNECT.
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